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STTH3L06U

STTH3L06U资料
STTH3L06U
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File Size : 116 KB
Manufacturer:STMicroectronics
Description:  The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, Transient Thermal Resistance − General Data and Its Use.   Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 ms. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RqJC).   A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For
 
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型 号:STTH3L06U
厂 家:STMicroectronics
封 装:SMB
批 号:2008+
数 量:90000
说 明:进口全新原装无铅优势库存
 
 
运  费:10.00元(快递)
所在地:深圳
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